Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

We present the results of a simulation study of Mg2Si heterojunction-based SOI TFETs using TCAD. Mg2Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (I-ON), off-current (I-OFF), and subthreshold swing were found to be 1.089 x 10(-5)A/mu m, 8.632 x 10(-17)A/mu m, 1.26 x 10(11), and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.

Automated summary

This study presents the simulation results of Mg2Si heterojunction-based SOI TFETs using TCAD. Mg2Si is utilized as the low-bandgap material for the source to achieve high on-current. The proposed structure enhances tunneling rate, leading to improved current conduction and subthreshold swing. The device exhibits on-current (I-ON), off-current (I-OFF), and subthreshold swing values of 1.089 x 10(-5)A/mu m, 8.632 x 10(-17)A/mu m, 1.26 x 10(11), and 27 mV/decade, respectively. Additionally, a systematic study on the physical interpretation of electron Fermi potential, DC, and analog/RF performance has been conducted. The proposed device follows the ITRS roadmap for low power switching performance.