Atomic-scale manipulation of single-polaron in a two-dimensional semiconductor

Polaron is a composite quasiparticle derived from an excess carrier trapped by local lattice distortion, and it has been studied extensively for decades both theoretically and experimentally. However, atomic-scale creation and manipulation of single-polarons in real space have still not been achieved so far, which precludes the atomistic understanding of the properties of polarons as well as their applications. Herein, using scanning tunneling microscopy, we succeeded to create single polarons in a monolayer two-dimensional (2D) semiconductor, CoCl2. Combined with first-principles calculations, two stable polaron configurations, centered at atop and hollow sites, respectively, have been revealed. Remarkably, a series of manipulation progresses - from creation, erasure, to transition - can be accurately implemented on individual polarons. Our results pave the way to understand the physics of polaron at atomic level, and the easy control of single polarons in 2D semiconductor may open the door to 2D polaronics including the data storage. Herein, using scanning tunnelling microscopy, the authors create single polarons in a monolayer two-dimensional semiconductor, CoCl2. They show that a series of manipulation progresses - from creation, erasure, to transition - can be accurately implemented on individual polarons.

Automated summary

Using scanning tunneling microscopy, the authors successfully create single polarons in a monolayer two-dimensional semiconductor, CoCl2. They demonstrate that a series of manipulation progresses - from creation, erasure, to transition - can be accurately implemented on individual polarons.