Investigation of electronic properties of Mn doped SnO2 thin film

Probing the electronic structure of Mn doped SnO2 is crucial due to its enormous applications including optoelectronics, superconductors, gas sensors etc. In the present study we have investigated the complete electronic structure of the 10% Mn doped SnO2 thin film on Si (001) substrate. X-ray diffraction confirms the single-phase growth with decreasing crystallite size with Mn doping. X-ray photoemission spectroscopic study reveals the presence of dominant Sn4+ with minor Sn2+ valence state owing to oxygen deficiency resulting in Mn4+ and Mn2+ state in our grown film. Our resonant photoemission study reveals the origin of different bands near Fermi level, which can be further tuned for various fundamental properties.

Automated summary

In this study, we have investigated the electronic structure of 10% Mn doped SnO2 thin film on Si(001) substrate. X-ray diffraction confirmed the single-phase growth with decreasing crystallite size upon Mn doping. X-ray photoemission spectroscopy revealed the presence of dominant Sn4+ and minor Sn2+ valence states, which resulted from oxygen deficiency and led to Mn4+ and Mn2+ states in the film. Our resonant photoemission study explained the origin of different energy bands near the Fermi level, which can be further manipulated for various fundamental properties.