Manipulating the optoelectronic characteristic of AZO films by magnetron sputtering power

We investigated the effects of sputtering power on the structure, morphology, electrical and optical properties of AZO films. The results show that all the films show typical hexagonal wurtzite structure with preferred c-axis orientation. When the sputtering power is 120 W, the film has the smallest FHWH value and the largest grain size (24.33 nm), and the AZO thin films obtained the best conductivity, the electrical characteristic parameters are rho = 3.25 x 10-3 omega cm, N = 3.512 x 1019 cm-3, mu H = 8.642 cm2V- 1s- 1, respectively. With the increase of sputtering power, the carrier concentration and hall mobility are increasing, which are directly related to the improvement of crystal quality, that is, the higher the crystal quality of the film, the better the conductivity. The average transmittance of all samples is above 80%, and the band gaps increase first and then decreased. This work implies that the application of controllable growth AZO transparent conductive film in photovoltaic devices.

Automated summary

The effects of sputtering power on the structure, morphology, electrical and optical properties of AZO films were investigated. The results showed that the film with a sputtering power of 120 W had the smallest FHWH value and the largest grain size, and exhibited the best conductivity. The carrier concentration and hall mobility increased with the increase of sputtering power, which was directly related to the improvement of crystal quality. The average transmittance of all samples was above 80%, and the band gaps showed an initial increase followed by a decrease. This work implies the potential application of controllable growth AZO transparent conductive film in photovoltaic devices.