Epitaxial growth of TiC on (0001) 4H-SiC substrate by reactive sputtering

Heteroepitaxial TiC films were grown on semi-insulating (0001) 4H-SiC substrates at high temperature by using direct current (DC) magnetron reactive sputtering. The effect of the CH4 flux ratio in Ar on the crystalline quality of the films was investigated. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results show that the deposited TiC films are heteroepitaxially grown on 4H-SiC substrates with the heteroepitaxial relationship between TiC and 4H-SiC in (111)(TiC) // (0001)(4H-SiC) and [1 (1) over bar0](TiC) // [11 (2) over bar0](4H-SiC). The full width at half-maximum (FWHM) of X-ray rocking curve (XRC) of (111)(TiC) reflection can reach a minimum value of 0.039 degrees and the resistivity of TiC film can be similar to 80 mu ohm center dot cm for deposition at 700 degrees C with 4% CH4 flow ratio. X-ray photoelectron spectroscopy (XPS) shows that the composition of TiC film is nearly in stoichiometry for 4% CH4 flow ratio. From the TEM results, it is observed that the TiC film is divided into a strained layer and a relaxed layer when the film thickness reaches a critical value over about 70 nm.

Automated summary

Heteroepitaxial TiC films were grown on 4H-SiC substrates using DC magnetron reactive sputtering with CH4 flux ratio in Ar as the variable. The film quality was analyzed using XRD and TEM techniques, which showed that the TiC films were heteroepitaxially grown on 4H-SiC substrates with a specific relationship. The film exhibited a minimum FWHM value and desirable resistivity when deposited at 700°C with a 4% CH4 flow ratio.