Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells

Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 x 10-2 Pa and 13x10-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.

Automated summary

Typical Cu(In,Ga)Se2 solar cells use an opaque molybdenum back contact, but transparent back contacts are needed for applications such as bifacial, semi-transparent or tandem solar cells. Various transparent conductive oxides have been tested, including indium- or fluorine-doped tin oxide and hydrogen-doped indium oxide. This study investigates a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH), where hydrogen is supplied from an Ar/H2 gas and oxygen is pulsed during deposition. Optimum oxygen and Ar/H2 partial pressures are found, resulting in IOH films with high transparency and low sheet resistance after annealing.