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Sydney C. Buttera et al.
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Huan-Yu Shih et al.
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P. Motamedi et al.
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Enhanced heat transfer by room temperature deposition of AlN film on aluminum for a light emitting diode package
Yu Jin Heo et al.
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C. R. Eddy et al.
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 3 (2013)
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Markus Bosund et al.
APPLIED SURFACE SCIENCE (2011)
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L. La Spina et al.
SOLID-STATE ELECTRONICS (2008)
XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy
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JX Zhang et al.
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L Shen et al.
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