Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data

Al1-xSix films were obtained by ion beam sputtering of an Al-Si composite target. Studies of the structure and electronic structure of Al1-xSix films were carried out. The structure and electronic structure of the films were investigated. The formation of an ordered phase of Al3Si was detected using X-ray diffraction and X-ray emission spectroscopy, as well as theoretical calculation of the band structure and Si L2.3-, Al L2.3-spectra. It is established that the Al3Si phase has a Cu3Au (Pm3m) type structure with a lattice parameter a=4.085 angstrom, the primitive sublattices of which are filled with atoms of two types Al and Si. It was found that the long-range order in Al1-xSix ion-beam films is sufficiently resistant to changes in the elemental composition from Al0.75Si0.25 to Al0.55Si0.45.

Automated summary

Al1-xSix films were prepared by ion beam sputtering and their structure and electronic structure were investigated. The formation of ordered phase Al3Si in the films was detected using X-ray diffraction and X-ray emission spectroscopy, along with theoretical calculation. It was found that the long-range order in the Al1-xSix films is resilient to changes in composition.