期刊
SURFACE & COATINGS TECHNOLOGY
卷 459, 期 -, 页码 -出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2023.129408
关键词
Plasma processes; Optical emission spectroscopy; Thin films; Ion Beam Analysis
WSiC:H coatings were prepared by reactive magnetron sputtering in an Ar/Si(CH3)4 plasma assisted by ECR microwave sources. These coatings have great potential for optical or mechanical applications. The development of these coatings is based on the correlation between in-situ diagnostics of the reactive plasma phase and the characterization of the resulting coatings. Optical emission spectroscopy identified a precursor flow rate range where W particles can be favored in the reactive plasma, facilitating the formation of composite coatings with a SiC:H matrix containing W-containing particles or aggregates. Material characterization techniques, like Scanning Electron Microscopy, Ion Beam Analysis, and X-ray Photoelectron Spectroscopy, were used to study the influence of the plasma phase on the microstructure and chemical composition of the deposited materials.
WSiC:H coatings were elaborated by reactive magnetron sputtering of a W target in an Ar/Si(CH3)4 plasma assisted by ECR microwave sources. Such coatings can be very interesting for optical or mechanical applications. The development of these coatings is based on the confrontation between in-situ diagnostics of the reactive plasma phase and material characterization of the resulting coatings. The investigation by optical emission spectroscopy of the different phenomena occurring in the reactive plasma reveals that there is a precursor flow rate range where W particles can be favored in the reactive plasma, to promote the development of composite coatings based on a SiC:H matrix, in which W-containing particles or aggregates are present. Material charac-terization such as Scanning Electron Microscopy, Ion Beam Analysis and X-ray Photoelectron Spectroscopy are used to study the impact of the plasma phase on the microstructure and chemical composition of the deposited materials.
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