A Highly Reliable Molybdenum Disulfide-Based Synaptic Memristor Using a Copper Migration-Controlled Structure

Memristors are drawing attention as neuromorphic hardware components because of their non-volatility and analog programmability. In particular, electrochemical metallization (ECM) memristors are extensively researched because of their linear conductance controllability. Two-dimensional materials as switching medium of ECM memristors give advantages of fast speed, low power consumption, and high switching uniformity. However, the multistate retention in the switching conductance range for the long-term reliable neuromorphic system has not been achieved using two-dimensional materials-based ECM memristors. In this study, the copper migration-controlled ECM memristor showing excellent multistate retention characteristics in the switching conductance range using molybdenum disulfide (MoS2) and aluminum oxide (Al2O3) is proposed. The fabricated device exhibits gradual resistive switching with low switching voltage (<0.5 V), uniform switching (sigma/mu similar to 0.07), and a wide switching range (>12). Importantly, excellent reliabilities with robustness to cycling stress and retention over 10(4) s for more than 5-bit states in the switching conductance range are achieved. Moreover, the contribution of the Al2O3 layer to the retention characteristic is investigated through filament morphology observation using transmission electron microscopy (TEM) and copper migration component analysis. This study provides a practical approach to developing highly reliable memristors with exceptional switching performance.

Automated summary

This study proposes a copper migration-controlled electrochemical metallization (ECM) memristor using two-dimensional materials, MoS2 and Al2O3, as the switching medium. The device exhibits low switching voltage, uniform switching, and a wide switching range, with excellent retention characteristics in the long-term reliable neuromorphic system. The contribution of the Al2O3 layer to the retention characteristic is investigated through filament morphology observation and copper migration component analysis.