Porous aromatic frameworks as HF resistant adsorbents for SF6 separation at elevated pressure

The public concern about sulfur hexafluoride (SF6) emission has driven the exploration of related removal processes via adsorptive separation technology. Based on task-specific porous materials, the capture of SF6 achieves lower energy consumption and less carbon footprint. Herein, four HF resistant porous aromatic frameworks (PAF-XJTU-1 to PAF-XJTU-4) with robust C-C linkage were prepared for the separation of SF6 in semiconductor etching exhaust. Single-component gas adsorption and IAST selectivity confirmed the separation performance of the four PAFs materials under elevated pressure (10 bar). Moreover, DFT studies revealed the nonnegligible SF6 intermolecular interaction in PAFs at elevated pressure. Under the dynamic scenario, break-through experiments proved the effective capture of SF6 in PAF-XJTUs.

Automated summary

The exploration of removal processes for sulfur hexafluoride (SF6) emission through adsorptive separation technology has been driven by public concerns. Using task-specific porous materials, the capture of SF6 can achieve lower energy consumption and a reduced carbon footprint. In this study, four HF resistant porous aromatic frameworks (PAF-XJTU-1 to PAF-XJTU-4) with strong C-C linkage were prepared for the separation of SF6 in semiconductor etching exhaust. Experimental results and theoretical studies confirmed the efficient capture of SF6 in PAF-XJTUs.