Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids

The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

Automated summary

The paper presents the long-term evolution and recent development of ultraviolet photodetectors, covering different types of detectors and their advancements. Attention is given to wide band gap semiconductor photodetectors, including AlGaN, SiC-based, and diamond detectors, as well as Ga2O3 as a promising material. New UV photodetector concepts based on low-dimensional solid materials are also discussed, highlighting improvements in performance.