相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。AlGaN-based deep ultraviolet micro-LED emitting at 275 nm
Huabin Yu et al.
OPTICS LETTERS (2021)
Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling
Li Chen et al.
LIGHT-SCIENCE & APPLICATIONS (2020)
Thermal and optical properties of high-density GaN micro-LED arrays on flexible substrates
Mohsen Asad et al.
NANO ENERGY (2020)
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
Matteo Meneghini et al.
JOURNAL OF APPLIED PHYSICS (2020)
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects
Wei Guo et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Michael Kneissl et al.
NATURE PHOTONICS (2019)
Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
Yosuke Nagasawa et al.
PHOTONICS RESEARCH (2019)
InGaN/GaN ultraviolet LED with a graphene/AZO transparent current spreading layer
Li Lin et al.
OPTICAL MATERIALS EXPRESS (2018)
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
Yosuke Nagasawa et al.
APPLIED SCIENCES-BASEL (2018)
Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes
Guo-Dong Hao et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes
Syuan-Hao Liou et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V. Sheremet et al.
SUPERLATTICES AND MICROSTRUCTURES (2017)
Abnormal Radiative Interband Transitions in High-Al-Content AIGaN Quantum Wells Induced by Polarized Orbitals
Li Chen et al.
ACS PHOTONICS (2017)
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
Kai Ding et al.
CRYSTALS (2017)
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Takayoshi Takano et al.
APPLIED PHYSICS EXPRESS (2017)
Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures
Guo-Dong Hao et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer
Tianhu Wang et al.
CHINESE SCIENCE BULLETIN (2014)
Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer
Jian-Kai Liou et al.
SOLID-STATE ELECTRONICS (2014)
Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes
Pengfei Tian et al.
APPLIED PHYSICS LETTERS (2012)
Temperature-dependent efficiency droop in InGaN-based light-emitting diodes induced by current crowding
Ya Ya Kudryk et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer
CJ Tun et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2006)
AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
KH Kim et al.
APPLIED PHYSICS LETTERS (2004)
Current crowding in GaN/InGaN light emitting diodes on insulating substrates
X Guo et al.
JOURNAL OF APPLIED PHYSICS (2001)
Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
SR Jeon et al.
APPLIED PHYSICS LETTERS (2001)
分享论文
