Optical quantum Hall Goos-Hanchen effect in graphene

Strong Goos-Hanchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the unconventional quantum Hall regime, magnetically strong tunable QHE GH shifts emerge. Our approach is based on deriving the generalized Fresnel coefficients with antisymmetric conductivity tensor for the Kerr phase of the incident linearly polarized light. Moreover, it is demonstrated that at low temperatures, GH shifts map plateaus as the intensity of the magnetic field grows. This quantum modulation of the GH effect in graphene by an applied magnetostatic bias may open doors to new opportunities for optical devices and QHE sensing applications in 2D materials. (c) 2023 Elsevier B.V. All rights reserved.

Automated summary

A strong Goos-Hanchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. By fully quantum describing the temperature-dependent surface conductivity of graphene in the unconventional quantum Hall regime, magnetically strong tunable QHE GH shifts are observed. The study derives generalized Fresnel coefficients with antisymmetric conductivity tensor for the Kerr phase of linearly polarized incident light. Furthermore, it is demonstrated that at low temperatures, GH shifts exhibit plateaus as the magnetic field intensity increases. This quantum modulation of the GH effect in graphene by applied magnetostatic bias may provide new opportunities for optical devices and QHE sensing applications in 2D materials.