Intrinsic Nonlinear Planar Hall Effect

We propose an intrinsic nonlinear planar Hall effect, which is of band geometric origin, independent of scattering, and scales with the second order of electric field and first order of magnetic field. We show that this effect is less symmetry constrained compared with other nonlinear transport effects and is supported in a large class of nonmagnetic polar and chiral crystals. Its characteristic angular dependence provides an effective way to control the nonlinear output. Combined with first-principles calculations, we evaluate this effect in the Janus monolayer MoSSe and report experimentally measurable results. Our work reveals an intrinsic transport effect, which offers a new tool for material characterization and a new mechanism for nonlinear device application.

Automated summary

We propose an intrinsic nonlinear planar Hall effect that is independent of scattering and scales with the second order of electric field and first order of magnetic field. This effect is less symmetry constrained and can be observed in a large class of nonmagnetic polar and chiral crystals. Combined with first-principles calculations, we demonstrate this effect in the Janus monolayer MoSSe and report experimentally measurable results. This work reveals a new intrinsic transport effect with potential applications in material characterization and nonlinear devices.