Single-Spin Readout and Quantum Sensing Using Optomechanically Induced Transparency

Solid-state spin defects are promising quantum sensors for a large variety of sensing targets. Some of these defects couple appreciably to strain in the host material. We propose to use this strain coupling for mechanically mediated dispersive single-shot spin readout by an optomechanically induced transparency measurement. Surprisingly, the estimated measurement times for negatively charged silicon-vacancy defects in diamond are an order of magnitude shorter than those for single-shot optical fluorescence readout. Our scheme can also be used for general parameter-estimation metrology and offers a higher sensitivity than conventional schemes using continuous position detection.

Automated summary

Solid-state spin defects can be used as quantum sensors for various sensing targets, with some defects coupling to strain in the host material. This strain coupling can be utilized for mechanically mediated dispersive single-shot spin readout using optomechanically induced transparency measurement. Surprisingly, the estimated measurement times for negatively charged silicon-vacancy defects in diamond are much shorter than those for single-shot optical fluorescence readout. This scheme can also be applied for general parameter-estimation metrology and offers higher sensitivity than conventional schemes using continuous position detection.