Spin-Polarized Edge-State Transport in L-Shaped MoS2 Nanodevice Modulated by Exchange Field and Electric Field

Herein, the spin-polarized edge-state transport properties in L-shaped zigzag MoS2 nanodevice (L-zMoS(2)ND) are investigated based on tight-binding model, Green's function method, and ballistic transport theory. The spin conductance and spin polarization are calculated by considering external exchange field and electric field. It is shown in the results that the spin conductance is closely related to the configuration of atomic non-consistence on the edge of L-zMoS(2)ND. Meanwhile, the spin conductance is determined by the spin channel opening on the edge, which can be modulated by external fields. The configuration characteristic and external fields give rise to effects of sublattice mismatch and spin mismatch on the edge channels, respectively. As a consequence, mismatch effects are actually employed to modulate the spin channel on the edge of L-zMoS(2)ND, and 100% spin polarization is realized selectively. Moreover, the corresponding local density of states distributions are plotted to reveal the modulation of the spin-resolved edge-state and the spin-filtering effects in the real space. These spin-polarized edge-state transport properties in L-zMoS(2)ND can have potential application in various kinds of spin valves and spin filters in nanocircuits.

Automated summary

The spin-polarized edge-state transport properties in L-shaped zigzag MoS2 nanodevice were investigated, and it was found that the spin conductance is closely related to the atomic configuration on the edge of the nanodevice. The spin conductance can be modulated by external fields and the edge channels are affected by sublattice and spin mismatches. As a result, a 100% spin polarization is achieved. The modulation of spin-resolved edge-state and spin-filtering effects are revealed in real space, suggesting potential application in nanocircuits.