Polysilsesquioxane Gate Dielectric Layers Cured by UV Light Irradiation Using Thiol-Ene Reaction for Organic Thin-Film Transistors

Polysilsesquioxane (PSQ) is used to make gate dielectric layers with pentacene to create thin-film transistors (TFTs) by incorporating 3-mercaptopropyl functional groups for UV light-initiated thiol-ene polymerization with vinyl-containing cross-linkers. The dielectric constant (epsilon) of the polymerized PSQ films is controlled by the ratio of 3-mercaptopropyl groups. When the 3-mercaptopropyl group comprises 20%, it yields a polymerized film with a epsilon of 4.2 +/- 0.2; upon decreasing this proportion to 10%, the epsilon for the subsequent film became 3.5 +/- 0.2. The hole mobility of the fabricated pentacene TFTs is observed to increase as epsilon decreases, reaching a maximum of 0.96 cm(2) V-1 s(-1).

Automated summary

Polysilsesquioxane (PSQ) is combined with pentacene to create thin-film transistors (TFTs) by incorporating 3-mercaptopropyl functional groups for thiol-ene polymerization. The dielectric constant of the polymerized PSQ films is controlled by the ratio of 3-mercaptopropyl groups. The hole mobility of the fabricated pentacene TFTs increases as the dielectric constant decreases.