4.6 Article

Structural and optical properties of rare earth doped Zn2SnO4 nano-composites prepared via Sol-gel synthesis

期刊

PHYSICA SCRIPTA
卷 98, 期 7, 页码 -

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IOP Publishing Ltd
DOI: 10.1088/1402-4896/acd884

关键词

doping; sol-gel; optical band gap; rare earth; Urbach energy

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Zn2SnO4 nanostructures doped with different rare earth elements (Dy3+, Sm3+, Yb2+, Eu3+ and Gd2+) were synthesized using sol-gel method. The crystallographic nature of the prepared materials was confirmed by X-Rays Diffraction (XRD). The particle sizes were calculated to be approximately 24 nm. The chemical bond types were identified through Fourier Transform Infrared spectroscopy (FTIR). The dopants affected the absorbance spectra, with a decrease in energy band gap (E (opt)) from 3.89 eV to 2.80 eV for direct transitions and a range of 3.93 to 2.25 eV for indirect transitions. The Urbach energies (E-U) were found to be within the range 0.70-0.42 eV. These results suggest that the suggested dopants can be utilized in the correct form in industrial applications.
Doped with different rare earth elements (Dy3+, Sm3+, Yb2+, Eu3+ and Gd2+), Zn2SnO4 nano-structures were synthesized using sol-gel method. Dopants were introduced in the prepared samples at concentrations 2 mol%. X-Rays Diffraction (XRD) results checked the crystallographic nature of the prepared materials. Using Scherrer's equation, the particles sizes were calculated and found to be almost 24 nm. The chemical bond types were identified through the Fourier Transform Infrared spectroscopy (FTIR). The dopants effect on the absorbance spectra was explored via the UV-Visible spectroscopy. The energy band gap (E (opt)) of Zn2SnO4 decreased (from 3.89 eV to 2.80 eV) with dopants addition for direct transitions and was in the range of 3.93 to 2.25 eV for indirect transitions. Similarly, Urbach energies (E-U) were found within the range 0.70-0.42 eV. The effect results of the suggested dopants at those concentrations on the structure and optical properties of Zn2SnO4 could be considered to be utilized in the correct form in the industrial applications.

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