Study of third harmonic generation in InxGa1_ xAs semi-parabolic 2-D quantum dot under the influence of Rashba spin-orbit interactions (SOI): Role of magnetic field, confining potential, temperature & hydrostatic pressure

In the present case, nonlinear optical susceptibility for InxGa1_xAs 2-D semi-parabolic Quantum Dot with the key prominence given to the magnetic field, Hydrostatic pressure, confining potential and Temperature on THG in the presence of Rashba SOI is investigated. The main expression of THG is attained using a formalism of compact density matrix. Our results are showing that rise/diminution in the Rashba SOI coefficient strongly affects the THG peaks. Also, a blue/redshift is observed with an increase/decrease in external factors such as Hydrostatic Pressure, magnetic field, Temperature, confining potential & Rashba SOI with a corresponding increase/decrease in peak height. According to the observation, two-photon resonance peaks are found to be stouter than one & three-photon resonance peaks as with a significant increase in the coupling, the strength of the dipole matrix element also increases in correspondence to the peak height. The conclusions are demonstrating that for the comprehensive engineering of optical devices based on the QDs, SOI must be taken into consideration, and hence by tuning the strength parameter, the optical properties of the optoelectronic devices can be controlled.

Automated summary

In this study, the effect of magnetic field, hydrostatic pressure, confining potential, and temperature on the third-harmonic generation (THG) in InxGa1-xAs 2D semi-parabolic quantum dots with Rashba spin-orbit interaction (SOI) is investigated. The main expression of THG is obtained using a formalism of compact density matrix. The results show that the Rashba SOI coefficient strongly affects the THG peaks, and external factors such as hydrostatic pressure, magnetic field, temperature, confining potential, and Rashba SOI induce a blue/redshift and corresponding increase/decrease in peak height. The conclusions suggest that for the engineering of optical devices based on quantum dots, the influence of SOI should be taken into consideration, and the optical properties of optoelectronic devices can be controlled by tuning the strength parameter.