Investigation of properties of Ta-doped Ga2O3 films prepared with seed layers

Ga2O3 is a promising ultra-wide bandgap semiconductor as a feasible candidate for power electronics, photodetectors, and sensors. Controlling electrical properties through doping is the key to its application in semiconductor devices. In this work, Ta-doped Ga(2)O(3)films were prepared by radio frequency (RF) magnetron sputtering with seed layers. Effects of the thickness of seed layers on the microstructure, morphology, optical and electrical properties of Ta-doped Ga(2)O(3)films were investigated. The fabricated Ta-doped Ga(2)O(3)films exhibited polycrystalline structure with uniform and smooth surface and high optical transmittance (>80 %) in the visible light region. The results showed that seed layers with appropriate thickness (similar to 20 nm) is beneficial to the improvement of crystalline quality and electrical properties of Ta-doped Ga(2)O(3)films.

Automated summary

In this study, Ta-doped Ga(2)O(3) films were prepared and the effects of seed layer thickness on the microstructure, morphology, optical, and electrical properties of the films were investigated. The results showed that seed layers with the appropriate thickness (around 20 nm) improved the crystalline quality and electrical properties of the Ta-doped Ga(2)O(3) films.