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Strain-tunable valley polarization and localized excitons in monolayer WSe2

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OPTICS LETTERS
卷 48, 期 9, 页码 2393-2396

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Optica Publishing Group
DOI: 10.1364/OL.487201

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We demonstrate the generation and detection of strained localized excitons in monolayer WSe2 by fabricating strained structures using nanoindentation technique. Enhanced emission of strain-localized excitons is observed with two sharp photoluminescence peaks. The valley polarization of strained localized excitons is increased, reaching a high value of approximately 79.6%, by modulating a magnetic field. These findings highlight the potential of tunable valley polarization and localized excitons in WSe2 monolayers for valleytronic applications.
Monolayer transition metal dichalcogenides (TMDs) have a crystalline structure with broken spatial inversion symmetry, making them promising candidates for valleytronic applications. However, the degree of valley polarization is usually not high due to the presence of intervalley scattering. Here, we use the nanoindentation technique to fabricate strained structures of WSe2 on Au arrays, thus demonstrating the generation and detection of strained localized excitons in monolayer WSe2. Enhanced emission of strain-localized excitons was observed as two sharp photoluminescence (PL) peaks measured using low-temperature PL spectroscopy. We attribute these emerging sharp peaks to excitons trapped in potential wells formed by local strains. Furthermore, the valley polarization of monolayer WSe2 is modulated by a magnetic field, and the valley polarization of strained localized excitons is increased, with a high value of up to approximately 79.6%. Our results show that tunable valley polarization and localized excitons can be realized in WSe2 monolayers, which may be useful for valleytronic applications. (C) 2023 Optica Publishing Group

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