On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands

Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary -metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology. & COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

This study demonstrates the first experimental success of room-temperature silicon PIN photodiodes hyperdoped with tellurium, operating in the optical telecom bands. The hyperdoped silicon material shows a strong room-temperature photoresponse in the short-wavelength infrared region due to the creation of an impurity band within the silicon band gap. The detailed description of the fabrication process, working principle, and performance, including key figures of merits, are provided.