Periodic surface structure of 4H-SiC by 46.9 nm laser

This paper presents an experimental study on the laser-induced atomic and close-to -atomic scale (ACS) structure of 4H-SiC using a capillary-discharged extreme ultraviolet (EUV) pulse of 46.9 nm wavelength. The modification mechanism at the ACS is investigated through molecular dynamics (MD) simulations. The irradiated surface is measured via scanning electron microscopy and atomic force microscopy. The possible changes in the crystalline structure are investigated using Raman spectroscopy and scanning transmission electron microscopy. The results show that the stripe-like structure is formed due to the uneven energy distribution of a beam. The laser-induced periodic surface structure at the ACS is first presented. The detected periodic surface structures with a peak-to-peak height of only 0.4 nm show periods of 190, 380, and 760 nm, which are approximately 4, 8, and 16 times the wavelength. In addition, no lattice damage is detected in the laser-affected zone. The study shows that the EUV pulse is a potential approach for the ACS manufacturing of semiconductors.

Automated summary

This paper presents an experimental study on the laser-induced atomic and close-to-atomic scale structure of 4H-SiC using a capillary-discharged extreme ultraviolet pulse. The modification mechanism at the close-to-atomic scale is investigated through molecular dynamics simulations. The results show the formation of stripe-like structures and laser-induced periodic surface structures, demonstrating the potential of extreme ultraviolet pulses for semiconductor manufacturing at the close-to-atomic scale.