Applying a time-saving and cost-effective postprocessing method to achieve a high-quality perovskite light emitting diode

Metal halide perovskite (MHP) materials are now investigated as the active layer of semiconductor devices such as solar cells and light-emitting diodes (LEDs). Perovskite LEDs (PeLEDs) with high-quality made by a costeffective process are needed to achieve a commercialized PeLED. To reach this goal, modifying and surface engineering the perovskite emissive thin films can be helpful. The manufacturing process must be economical and time-saving for fabricating an effective commercial device. This work presents an effective postprocessing method to recrystallize the perovskite emissive layer. The method includes both annealing and plasma treatment, which takes a short time and does not need vacuum tools. Applying this process results in a reduction of the MAPbBr3 grain size. It also increases perovskite emitters' carrier recombination rate and photoluminescence quantum yields (PLQY). These results indeed can increase luminance (-68500 cd/m2), External quantum efficiency (EQE, -20.5%), and lifetime (-350 min).

Automated summary

This study presents an effective postprocessing method for recrystallizing the perovskite emissive layer. The method involves annealing and plasma treatment, which are time-saving and do not require vacuum tools. Applying this process reduces the grain size of the MAPbBr3 and increases the carrier recombination rate and photoluminescence quantum yields of the perovskite emitters. These results indeed improve the luminance, external quantum efficiency, and lifetime of the devices.