Random lasing behaviour in Al-doped ZnO nanorods

A novel method of doping Aluminum (Al) into zinc oxide (ZnO) nanorods by a simple chemical dip process is evaluated in terms of its performance in random lasing. The ZnO nanorods were synthesized by the chemical bath deposition (CBD) method at a fixed temperature of 96 degrees C for 3 h. The ZnO nanorods were then dipped into a fixed doping solution concentration. The dip time was varied between 0 s and 80 s and a gradual increase of Al % from the nanorod array was observed with increasing dip time. Doping ZnO nanorods in aluminum nitrate nonahydrate solution for 40 s contributes to random lasing with the lowest threshold value of 12.48 mJ/cm2 and a spectral width of 2.12 nm.

Automated summary

A novel method of doping Aluminum (Al) into zinc oxide (ZnO) nanorods by a simple chemical dip process is evaluated in terms of its performance in random lasing. The ZnO nanorods were synthesized using chemical bath deposition (CBD) method at 96 degrees C for 3 h. The nanorods were then dipped in a fixed doping solution concentration, and the dip time was varied between 0 s and 80 s. Doping ZnO nanorods in aluminum nitrate nonahydrate solution for 40 s contributes to random lasing with the lowest threshold value of 12.48 mJ/cm2 and a spectral width of 2.12 nm.