Conduction mechanism and UV/visible photodetection properties of p-Si/n-SiC heterostructure

This study examines the electrical and optical properties of p-Si/n-SiC heterojunctions subjected to UV and visible light in addition to the conduction mechanism of the device. The surfaces of the sputtered SiC film was analyzed using energy-dispersive X-ray (EDX) and scanning electron microscopy (SEM). The rectification ratio of the heterojunction was determined as 1.4 x 10(3) in the dark. In addition, the device exhibited good rectification under all lights. In stability tests of the device, an improvement in characteristics was observed in I-V measurements after 67 days, and this was attributed to carbon migration or stacking faults between Si and SiC, the interface modification and interfacial states. Since the band gap of SiC is suitable for UV detection, it was observed that the photoresponse under UV was quite good. Responsivity, detectivity, ON/OFF ratio and EQE values were analyzed as the function of applied voltage. It was observed that the device exhibited the best performance especially under 365 nm UV light. The responsivity and detectivity of the device are found to be - 5 A/W and 7.6 x10(11) Jones, respectively under UV (365 nm) illumination, respectively.

Automated summary

This study investigates the electrical and optical properties of p-Si/n-SiC heterojunctions under UV and visible light, as well as the conduction mechanism of the device. The surfaces of the sputtered SiC film were analyzed using EDX and SEM. The heterojunction exhibited good rectification under all light conditions, with the best performance observed under UV light at 365 nm. The device showed improved characteristics after stability tests, attributed to carbon migration or stacking faults, interface modification, and interfacial states.