相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Simulating the effect of Ar+ energy implantation on the strain propagation in AlGaN
J. S. Cabaco et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Multiple reflection optimization package for X-ray diffraction
S. Magalhaes et al.
CRYSTENGCOMM (2021)
Binder free and high performance of sputtered tungsten nitride thin film electrode for supercapacitor device
Ravi Prakash et al.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2019)
Chemical and structural characterization of tungsten nitride (WNx) thin films synthesized via Gas Injection Magnetron Sputtering technique
B. Wicher et al.
VACUUM (2019)
Measuring strain caused by ion implantation in GaN
P. Mendes et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2019)
RBS/C, XRR, and XRD Studies of Damage Buildup in Er-Implanted ZnO
Przemyslaw Jozwik et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2019)
Structural, optical and annealing studies of nitrogen implanted GaAs
M. S. Saleem et al.
PHYSICA B-CONDENSED MATTER (2018)
Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures
M. Fialho et al.
SURFACE & COATINGS TECHNOLOGY (2018)
Thermal and chemical stability of the β-W2N nitride phase
R. Mateus et al.
NUCLEAR MATERIALS AND ENERGY (2017)
Deuterium retention in MeV self-implanted tungsten: Influence of damaging dose rate
T. Schwarz-Selinger
NUCLEAR MATERIALS AND ENERGY (2017)
Tungsten nitride coatings obtained by HiPIMS as plasma facing materials for fusion applications
Vasile Tiron et al.
APPLIED SURFACE SCIENCE (2017)
Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
D. Nd. Faye et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2016)
Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
S. Magalhaes et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices
D. Nd. Faye et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2016)
Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds
M. Fialho et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2016)
Deuterium implantation into tungsten nitride: Negligible diffusion at 300 K
L. Gao et al.
JOURNAL OF NUCLEAR MATERIALS (2014)
Transformation of YSZ under high fluence argon ion implantation
I. O. Usov et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2014)
First nitrogen-seeding experiments in JET with the ITER-like Wall
M. Oberkofler et al.
JOURNAL OF NUCLEAR MATERIALS (2013)
On the mechanism of damage buildup in gallium nitride
A. Turos
RADIATION EFFECTS AND DEFECTS IN SOLIDS (2013)
Accurate Determination of Quantity of Material in Thin Films by Rutherford Backscattering Spectrometry
C. Jeynes et al.
ANALYTICAL CHEMISTRY (2012)
Strain build-up, swelling and stacking fault formation in implanted 4H-SiC
J-F. Barbot et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 (2012)
Nitrogen and neon retention in plasma-facing materials
M. Rubel et al.
JOURNAL OF NUCLEAR MATERIALS (2011)
Interaction of nitrogen plasmas with tungsten
K. Schmid et al.
NUCLEAR FUSION (2010)
Relationship between radiation damage anisotropy in MgO and YSZ single crystals and the Ion/Atom ratio deposition parameter in biaxially-textured MgO and YSZ thin films fabricated by ion beam assisted deposition
I. O. Usov et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
XRD investigation of the strain/stress state of ion-irradiated crystals
Aurelien Debelle et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
SRIM - The stopping and range of ions in matter (2010)
James F. Ziegler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface
S. V. Plyushcheva et al.
INORGANIC MATERIALS (2009)
A low-cost, accurate and non-intercepting continuous method for beam current measurements in a high-current ion implanter
L. M. Redondo et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2007)
Status of ion beam data analysis and simulation software
E Rauhala et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2006)
Plasma-surface interaction in the context of ITER
AW Kleyn et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2006)
Crystallographic orientation dependence of radiation damage in Ar+ implanted YSZ and MgO single crystals
IO Usov et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2005)
Crystallite size distribution and dislocation structure determined by diffraction profile analysis:: principles and practical application to cubic and hexagonal crystals
T Ungár et al.
JOURNAL OF APPLIED CRYSTALLOGRAPHY (2001)
Microstructure and structure characteristics of cubic WNx compounds
YG Shen et al.
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING (2000)
分享论文
