In situ x-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al2O3 on SiO x /Si: Interface dipole and persistent surface groups

Atomic layer deposition (ALD) has become an essential technology in many areas. To better develop and use this technology, it is of the pivot to understand the surface chemistry during the ALD film growth. The growth of an ALD oxide film may also induce an electric dipole at the interface, which may be further tuned to modulate the flat band voltage for electronic device applications. To understand the associated surface chemistry and interface dipole formation process, we herein employ an in situ x-ray photoelectron spectroscopy technique to study the ALD growth of Al2O3, from trimethylaluminum and H2O, on the SiO (x) /Si surface. We find that an electric dipole is formed at the Al2O3/SiO (x) interface immediately after the first Al2O3 layer is deposited. We also observe persistent surface methyl groups in the H2O half-cycle during ALD, and the amount of the persistent methyls is particularly higher during the initial Al2O3 ALD growth, which suggests the formation of Si-CH3 on the surface. These findings can provide useful routes and insights toward interface engineering by ALD.

Automated summary

Atomic layer deposition (ALD) is an important technology in various fields. Understanding the surface chemistry and interface dipole formation during ALD film growth is essential for its development and application. In this study, the in situ x-ray photoelectron spectroscopy technique was used to investigate the ALD growth of Al2O3 on SiO(x)/Si surface. It was found that an electric dipole is formed at the Al2O3/SiO(x) interface after the deposition of the first Al2O3 layer. Persistent surface methyl groups were also observed during the H2O half-cycle of ALD, particularly during the initial Al2O3 growth, indicating the formation of Si-CH3 on the surface. These findings provide valuable insights for interface engineering by ALD.