A novel CVD graphene-based synaptic transistors with ionic liquid gate

The synaptic devices based on various electronic materials have been widely investigated to realize functions of artificial information processing with low power consumption. In this work, a novel CVD graphene field-effect transistor is fabricated with ionic liquid gate to study the synaptic behaviors based on the electrical-double-layer mechanism. It is found that the excitative current is enhanced with the pulse width, voltage amplitude and frequency. With different situations of the applied pulse voltage, the inhibitory and excitatory behaviors are successfully simulated, at the same time the short-term memory is also realized. The corresponding ions migration and charge density variation are analyzed in the different time segments. This work provides the guidance for the design of artificial synaptic electronics with ionic liquid gate for low-power computing application.

Automated summary

In this study, a novel CVD graphene field-effect transistor with ionic liquid gate was fabricated to investigate synaptic behaviors based on the electrical-double-layer mechanism. It was found that the excitative current was enhanced with the pulse width, voltage amplitude and frequency. By simulating inhibitory and excitatory behaviors under different pulse voltage situations, short-term memory was achieved. The migration of ions and variation of charge density were analyzed in different time segments. This work provides guidance for the design of low-power artificial synaptic electronics with ionic liquid gate.