4.6 Article

Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

期刊

NANOTECHNOLOGY
卷 34, 期 24, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6528/acc3a2

关键词

nanoporous; GaN; nanomask; SiN; AlN; sublimation

向作者/读者索取更多资源

Nanoporous GaN layers were successfully fabricated using selective area sublimation with an AlN nanomask. The porosity of the layers could be adjusted by changing the nanomask thickness and sublimation conditions. The porous GaN layers showed improved room temperature photoluminescence properties, especially in the 0.4-0.65 porosity range. The characteristics of these porous layers were compared to those obtained with a Si(x)N(y) nanomask, and the regrowth of p-type GaN on light emitting diode structures made porous with different nanomasks were also compared.
Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4-0.65 range. The characteristics of these porous layers were compared to those obtained with a Si (x) N (y) nanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a Si (x) N (y) nanomask were compared.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据