Nanoporous GaN by selective area sublimation through an epitaxial nanomask: AlN versus Si x N y

Nanoporous GaN layers were fabricated using selective area sublimation through a self-organized AlN nanomask in a molecular beam epitaxy reactor. The obtained pore morphology, density and size were measured using plan-view and cross-section scanning electron microscopy experiments. It was found that the porosity of the GaN layers could be adjusted from 0.04 to 0.9 by changing the AlN nanomask thickness and sublimation conditions. The room temperature photoluminescence properties as a function of the porosity were analysed. In particular, a strong improvement (>100) of the room temperature photoluminescence intensity was observed for porous GaN layers with a porosity in the 0.4-0.65 range. The characteristics of these porous layers were compared to those obtained with a Si (x) N (y) nanomask. Furthermore, the regrowth of p-type GaN on light emitting diode structures made porous by using either an AlN or a Si (x) N (y) nanomask were compared.

Automated summary

Nanoporous GaN layers were successfully fabricated using selective area sublimation with an AlN nanomask. The porosity of the layers could be adjusted by changing the nanomask thickness and sublimation conditions. The porous GaN layers showed improved room temperature photoluminescence properties, especially in the 0.4-0.65 porosity range. The characteristics of these porous layers were compared to those obtained with a Si(x)N(y) nanomask, and the regrowth of p-type GaN on light emitting diode structures made porous with different nanomasks were also compared.