Ambipolar tribotronic transistor of MoTe2

Two-dimensional (2D) tribotronic devices have been successfully involved in electromechanical modulation for channel conductance and applied in intelligent sensing system, touch screen, and logic gates. Ambipolar transistors and corresponding complementary inverters based on one type of semiconductors are highly promising due to the facile fabrication process and readily tunable polarity. Here, we demonstrate an ambipolar tribotronic transistor of molybdenum ditelluride (MoTe2), which shows typical ambipolar transport properties modulated by triboelectric potential. It is comprised of a MoTe2 transistor and a lateral sliding triboelectric nanogenerator (TENG). The induced triboelectric potential by Maxwell's displacement current (a driving force for TENG) can readily modulate the transport properties of both electrons and holes in MoTe2 channel and effectively drive the transistor. High performance tribotronic properties have been achieved, including low cutoff current below 1 pA center dot mu m(-1) and high current on/off ratio of similar to 10(3) for holes and electrons dominated transports. The working mechanism on how to achieve tribotronic ambipolarity is discussed in detail. A complementary tribotronic inverter based on single flake of MoTe2 is also demonstrated with low power consumption and high stability. This work presents an active approach to efficiently modulate semiconductor devices and logic circuits based on 2D materials through external mechanical signal, which has great potential in human-machine interaction, intelligent sensor, and other wearable devices.

Automated summary

In this study, two-dimensional tribotronic devices were successfully used for electromechanical modulation of channel conductance, finding applications in intelligent sensing systems, touch screens, and logic gates. The researchers demonstrated an ambipolar tribotronic transistor made of molybdenum ditelluride (MoTe2), showing typical ambipolar transport properties modulated by triboelectric potential. A complementary tribotronic inverter based on single flake of MoTe2 was also demonstrated. These findings present an active approach to efficiently modulate semiconductor devices and logic circuits based on 2D materials through external mechanical signal, with potential applications in human-machine interaction, intelligent sensors, and wearable devices.