Optically Induced Spin Electromotive Force in a Ferromagnetic-Semiconductor Quantum Well Structure

Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in a GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few-nanometer-thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows the resolution of the dynamic FM proximity effect on a nanometer scale. The method can be generalized to various systems, including rapidly developing 2D van der Waals materials.

Automated summary

Hybrid structures combining ferromagnetic and semiconductor constituents have great potential for future applications in spintronics. A systematic approach to study spin-dependent transport in a GaMnAs/GaAs/InGaAs quantum well hybrid structure is developed, using spin electromotive force measurements and photoluminescence detection. This method provides a powerful tool for studying the properties of such hybrid structures and can be applied to other systems, including 2D van der Waals materials.