High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning

Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/offratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on gamma-InSe, in which a high performance with a large on/offratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.

Automated summary

Sliding ferroelectricity associated with interlayer translation is a promising approach for miniaturizing ferroelectric devices. However, the weak polarization limits the performance of sliding ferroelectric transistors, leading to a low on/off ratio and a narrow memory window. To overcome this, we propose a simple strategy to regulate the Schottky barrier in sliding ferroelectric semiconductor transistors based on gamma-InSe, resulting in high performance with a large on/off ratio (106) and a wide memory window (4.5V). Furthermore, the memory window can be modulated by electrostatic doping or light excitation. These findings provide new opportunities for designing novel ferroelectric devices based on emerging sliding ferroelectricity.