4.8 Article

Enhanced Exciton-to-Trion Conversion by Proton Irradiation of Atomically Thin WS2

期刊

NANO LETTERS
卷 23, 期 9, 页码 3754-3761

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c04987

关键词

defect engineering; proton irradiation; nanopores; transition metal dichalcogenides (TMDs); excitonic property

向作者/读者索取更多资源

Defect engineering with proton irradiation was used to enhance the exciton-to-trion conversion of atomically thin WS2. Scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy confirmed the correlation between altered excitonic states and nanopore-induced atomic displacement, W nanoclusters, and zigzag edge terminations. Density functional theory calculation and ion energy loss simulation provided further evidence for band perturbations and nanopore formation without destroying the overall crystallinity. This study offers a new approach for tuning excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering method.
Defect engineering of van der Waals semiconduc-tors has been demonstrated as an effective approach to manipulate the structural and functional characteristics toward dynamic device controls, yet correlations between physical properties with defect evolution remain underexplored. Using proton irradiation, we observe an enhanced exciton-to-trion conversion of the atomically thin WS2. The altered excitonic states are closely correlated with nanopore induced atomic displacement, W nanoclusters, and zigzag edge terminations, verified by scanning transmission electron microscopy, photoluminescence, and Raman spectrosco-py. Density functional theory calculation suggests that nanopores facilitate formation of in-gap states that act as sinks for free electrons to couple with excitons. The ion energy loss simulation predicts a dominating electron ionization effect upon proton irradiation, providing further evidence on band perturbations and nanopore formation without destroying the overall crystallinity. This study provides a route in tuning the excitonic properties of van der Waals semiconductors using an irradiation-based defect engineering approach.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据