Investigating the effects of impurity on electron mobility in quasi-one-dimensional wires

In this research, the electron mobility in GaAs quasi-one-dimensional wires with the presence of ionized impurity at zero temperatures was investigated and the results were compared with the mobility of a two-dimensional electron gas system. GaAs is a non-magnetic semiconductor with a direct band gap. Here for the calculations, the Boltzmann transport equation is used in the relaxation time approximation, taking into account the ionized impurity potential. Focusing on ionized Coulomb scattering and the short-range disorder is our goal. Electron mobility was investigated based on related parameters (Fermi energy and width of nanowires), and its diagram was drawn. In the end, the results of this research were compared with electron mobility in completely two-dimensional electronic systems. As expected, the numerical results showed that the electron mobility in extensive wires converges to the electron gas mobility of a fully two-dimensional plane.

Automated summary

In this research, the electron mobility in GaAs quasi-one-dimensional wires with the presence of ionized impurity at zero temperatures was investigated and compared with the mobility of a two-dimensional electron gas system. The Boltzmann transport equation was used in the relaxation time approximation, considering the ionized impurity potential. The focus was on ionized Coulomb scattering and the short-range disorder. Electron mobility was investigated based on related parameters and its diagram was drawn. The results were compared with electron mobility in completely two-dimensional electronic systems, showing convergence to the electron gas mobility.