FEM modelling and performance evaluation of a flexible film bulk acoustic resonator

In this article the F-FBAR device is designed by placing a piezoelectric material (PZT) between two metal (Al) electrodes on the top of a Bragg's reflector structure (Bragg's reflector is composed by placing high and low acoustic impedance materials placed on one over another) and this Bragg's reflector configuration is mounted on a flexible substrate (polyethylene terephthalate (PET)). The resonance properties of a F-FBAR have been investigated through finite element method (FEM) simulations. The effects of acoustic impedance layer thickness variation on the sensor efficiency have been studied. This study gives new idea in designing of high-performance F-FBAR sensors. It is also reported that, for an enhancement in coupling coefficient bottom electrode must be placed just above the high acoustic impedance layer (W). However, for enhancement in the quality factor bottom electrode must be placed just above the low acoustic impedance layer (SiO2).

Automated summary

In this article, the F-FBAR device is designed by placing a piezoelectric material (PZT) between two metal (Al) electrodes on top of a Bragg's reflector structure, which is mounted on a flexible substrate. The resonance properties of the F-FBAR have been investigated through finite element method (FEM) simulations, and the effects of acoustic impedance layer thickness variation on sensor efficiency have been studied. This study provides new insights in the design of high-performance F-FBAR sensors. It is also reported that the placement of the bottom electrode just above the high or low acoustic impedance layer can enhance the coupling coefficient or the quality factor, respectively.