Probing performance of p-GaAsP/i-GaAs/n-GaAsP solar cells through compositional and geometrical variations

This paper investigates the photovoltaic performance enhancement of our proposed p-GaAsP/i-GaAs/n-GaAsP solar cell by varying the thickness of the intrinsic layer in the range 40-200 nm, molar contents of As from 70 to 95% in the GaAsP alloy and the choice of cap layer materials e. g., GaAs, GaInP, AlGaAs. Using calibrated SENTAURUS TCAD tools the performance is evaluated in terms of open circuit voltage (V-oc), short circuit current density (J(sc)), fill-factor and power conversion efficiency (PCE). The optimized solar cell featuring i-layer thickness of 60 nm, 90% molar content of As in GaAsP alloy with Al0.8Ga0.2As as the cap layer yields short circuit current density (J(sc)) of 26.50 mA/cm(2), open circuit voltage (V-oc) of 1.085 V, fill-factor (FF) of 0.89, and power conversion efficiency (PCE) of 25.60% at AMI.5G solar spectrum.

Automated summary

This paper investigates the photovoltaic performance enhancement of a p-GaAsP/i-GaAs/n-GaAsP solar cell by varying the thickness of the intrinsic layer, molar contents of As in the GaAsP alloy, and the choice of cap layer materials. The optimized solar cell features a 60 nm thick intrinsic layer, 90% molar content of As in GaAsP alloy, and Al0.8Ga0.2As as the cap layer, achieving a short circuit current density of 26.50 mA/cm(2), open circuit voltage of 1.085 V, fill-factor of 0.89, and power conversion efficiency of 25.60% under AMI.5G solar spectrum.