Ion-beam deposited platinum as electrical contacting material in operando electron microscopy experiments at elevated temperatures

Establishing a stable and well conducting contacting material is critical for operando electron microscopy experiments of electrical and electrochemical devices at elevated temperatures. In this contribution, the nanostructure and electrical conductivity of ion beam deposited Pt are investigated both in vacuum and in oxygen as a function of temperature. Its microstructure is relatively stable up to a temperature of approx. 800 degrees C and up to an applied current density of approx. 100 kA/cm(2). Its conductivity increases with temperature, attributed to densification, with changes in the hydrocarbon matrix being less important. Recommendations are provided with respect to the Pt deposition parameters in terms of maximizing stability and minimizing electrical resistance. Research Highlights center dot It is feasible to use ion beam deposited Pt as electrical contacting material in operando electron microscopy. center dot The deposited Pt is relatively stable up to 800 degrees C and approx. 100 kA/cm(2). center dot The resistivity can be reduced by increasing the applied ion current during deposition and by thermal annealing at a temperature of 500 degrees C in a few mbar of oxygen.

Automated summary

This study investigates the nanostructure and electrical conductivity of ion beam deposited Pt for operando electron microscopy at elevated temperatures. It reveals that the microstructure of Pt remains stable up to around 800 degrees C and with an applied current density of approximately 100 kA/cm(2). The conductivity increases with temperature due to densification, while changes in the hydrocarbon matrix have less influence. Recommendations are provided for optimizing Pt deposition parameters to maximize stability and minimize electrical resistance.