4.6 Article

A novel passivating contact approach for enhanced performance of crystalline silicon solar cells

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ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2022.107231

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TOPCon solar cell; Passivated contact; Nanocrystalline silicon oxide; Tunnel oxide

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Passivated contacts based on ultrathin SiOx and phosphorus-doped nc-SiOx(n) layers were investigated for their application in TOPCon solar cells. The surface passivation of the contacts was enhanced, resulting in superior recombination current density values. TOPCon solar cells with nc-SiOx(n)/SiOx passivation contacts exhibited high Voc and FF. The study also focused on improving solar cell performance using transparent passivating contacts and understanding their passivation process and operating principle.
Passivated contacts based on ultrathin silicon oxide (SiOx) layers and phosphorus-doped nanocrystalline silicon oxide (nc-SiOx(n)) layers have been examined for their application in tunnel oxide-passivated contact (TOPCon) solar cells. Passivated contact nc-SiOx(n)/SiOx, is accomplished by implementing a thermally grown SiOx tunnel layer and a plasma-enhanced chemical vapor deposited (PECVD)-grown nc-SiOx(n) layer, which are subsequently transformed into a more crystalline phase by annealing at a higher temperature. In this research, a 3.2 x 3.2 cm solar cell was fabricated, where the base material was n-type crystalline silicon (c-Si(n)), and an aluminum oxide (Al2O3) acts as a passivation layer which helps to enhanced the passivation properties and indium tin oxide (ITO) layer was used on the front side, which could serve as an anti-reflection coating (ARC), respectively. The in-fluence of the temperature, doping level, and thickness of nc-SiOx(n) on the surface passivation of the contacts was investigated. Superior recombination current density (Jo) values of up to 2.9 fA/cm2 were assessed for the nc-SiOx(n)/SiOx contacts. TOPCon solar cells with top boron-doped emitter, Al2O3, and ITO/rear stack of nc-SiOx(n)/SiOx passivation contacts were formed and resulted in Voc = 650 mV and FF = 78%. Furthermore, we focused on ameliorating the achievements of solar cells using a transparent passivating contact-based nc-SiOx(n), as well as the passivation process and operating principle.

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