Highly responsive SnSe/GaN heterostructure-based UVC-SWIR broadband photodetector

Broadband photodetection spans the ultraviolet-C (250 nm) to shortwave-infrared (1250 nm) range is essential and desirable for various applications such as optical communication, spectral switching, and memory storage. We have utilized ultraviolet-responsive gallium nitride (GaN) and Tin selenide (SnSe) as the infrared-activated material to fabricate a broadband heterojunction-based optical detector. Through SnSe/GaN heterostructure, the fabricated detector combines GaN's ultraviolet to visible, with SnSe's visible to shortwave-infrared detect-ability. The device also possesses great responsiveness and a low dark current due to edge contact geometry, which directly accesses the heterostructure interface for both materials. The fabricated device functions well from the ultraviolet-C to the shortwave-infrared region, exhibiting the highest responsivity of 128 AW-1 and the lowest noise equivalent power of 5.2 x 10-14 WHz- 1/2, the quantum efficiency-5 x 104% with a response time-800 mu s for ultraviolet illumination while the highest responsivity of 6.06 AW-1 and noise equivalent power of 1 x 10-12 WHz- 1 for the device under infrared illumination. The research will open up new possibilities for op-toelectronic applications utilizing heterostructure-based wideband detection.

Automated summary

By utilizing ultraviolet-responsive gallium nitride (GaN) and infrared-activated tin selenide (SnSe), a broadband heterojunction-based optical detector was fabricated, combining the detection capabilities of GaN in the ultraviolet to visible range and SnSe in the visible to shortwave-infrared range. The detector exhibited high responsivity, low dark current, and edge contact geometry for direct access to the heterostructure interface of both materials. The device showed excellent performance across the ultraviolet-C to shortwave-infrared region, with a maximum responsivity of 128 AW-1, a noise equivalent power of 5.2 x 10-14 WHz- 1/2, and a quantum efficiency of 5 x 104% for ultraviolet illumination, and a maximum responsivity of 6.06 AW-1 and noise equivalent power of 1 x 10-12 WHz- 1 for infrared illumination. This research opens up new possibilities for wideband detection in optoelectronic applications utilizing heterostructure-based devices.