Synthesis of aluminum telluride thin films via using electrodeposition method for solar absorber applications

In this work, aluminum telluride thin films were synthesized via using a systematically electrodeposited method at different applied anodic potentials (2-12 V) on conductive FTO glass substrates. As the aluminium sheet was used as a source of Al3+ cation and the Na2TeO3 solution produced Te2-anion. X-ray diffractometry (XRD), field -emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), and ultraviolet-visible (UV) spectroscopy were employed to investigate the unique properties of the Al2Te3 thin films. The results reveal that the electrodeposited Al2Te3 films can be a good promising candidate for a solar absorber material or other optoelectronic applications through the analysis of structural, morphological, and optical properties with the significant evidence of the optimum applied anodic potential condition in the range of 8-12 V.

Automated summary

In this study, aluminum telluride thin films were synthesized using a systematic electrodeposition method at different applied anodic potentials (2-12 V) on conductive FTO glass substrates. The unique properties of the Al2Te3 thin films were investigated using X-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), and ultraviolet-visible (UV) spectroscopy. The results show that the electrodeposited Al2Te3 films can be a promising candidate for solar absorber materials or other optoelectronic applications, with the optimum applied anodic potential condition in the range of 8-12 V.