Microstructural characterization and thermal stability of He charged amorphous silicon films prepared by magnetron sputtering in helium

Sputtering of silicon in a Helium magnetron discharge has been reported as a bottom-up procedure to obtain amorphous Si films containing high amounts of gas-filled nanopores. Here we compare the microstructure and composition of Si-He nanocomposite films deposited by magnetron sputtering (MS) with 4He in DC or RF and 3He in RF operation modes. Electron microscopy (SEM and TEM), X-ray diffraction (XRD) and ion beam analysis (IBA) have been used to analyze the films and to investigate the in-situ and ex-situ thermal evolution. Depending on deposition conditions different in depth compositions, nanopore size and shape distributions, porosity and He content could be obtained. The presence of impurities (i.e. oxygen) has shown to promote He diffusivity reducing He accumulation. The start temperature of He-release varied in the range 473-723 K without films crystallization. Films grown in RF mode reached contents of 32 and 29 at% of 4He and 3He and were respectively stable up to 573 and 723 K both in vacuum and under inert gas flow. In-situ p-EBS (proton Elastic Back Scattering) allowed monitoring the He release accompanied by blistering/delamination effects visualized by SEM. These results show the potentiality of annealing to hold nano-porous structures after liberation of trapped gas.

Automated summary

The microstructure and composition of Si-He nanocomposite films deposited by magnetron sputtering (MS) with different operation modes were compared. The films exhibited different depth compositions, nanopore size and shape distributions, porosity, and He content depending on deposition conditions. The presence of impurities promoted He diffusivity and reduced He accumulation. The release of He occurred at temperatures ranging from 473-723 K without film crystallization, and films grown in RF mode remained stable up to 573 and 723 K for 4He and 3He content respectively.