High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p-n junction

Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of air bubbles and wrinkles. In this paper, a synthesis method merging exfoliation and CVD is reported to fab-ricate photodetectors of the GaSe/PtSe2 heterojunction. The devices present the highest responsivity and detectivity of about 1.7 A/W and 3.51 x 1012 Jones at a -10 V bias under the avalanche mode, respec-tively. Also, a fast response time could be obtained around 20 ls. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode.(c) 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

Automated summary

This paper reports a synthesis method using exfoliation and CVD to fabricate GaSe/PtSe2 heterojunction photodetectors. The devices exhibit the highest responsivity of about 1.7 A/W and detectivity of 3.51 x 1012 Jones at a -10 V bias under the avalanche mode. Additionally, the photodetector shows a clear photovoltaic effect and can operate in a self-powered mode.