Electron Trapping Optical Storage Using A Single-Wavelength Light Source for Both Information Write-In and Read-Out

In conventional electron trapping optical storage phosphor, both short- and long-wavelength light are needed for information write-in and read-out, respectively, complicating the optical storage system. Here, a Y3Al2Ga3O12:Pr3+,Eu3+ optical storage phosphor with Pr3+ as an electron donor and Eu3+ as an electron trap is designed, and a single wavelength write-read scheme is demonstrated, which employs the same blue laser diode (LD) light source for both optical write-in through two-photon up-conversion charging and for read-out based on photostimulated luminescence (PSL), originated from 4f(1)5d(1)-> 4f(2) transition of Pr3+ peaked at 315 nm in UV region. A deep electron trap with the mean depth of 1.42 eV and a narrow distribution of 0.3 eV is observed in the presence of Eu3+ in Y3Al2Ga3O12:Pr3+, implying its long-term storage potential. The write-in and read-out experiments are conducted using 450 nm blue LD light with the power density of 1 W cm(-2) for write-in and that with a low power density of 0.02 W cm(-2) for read-out in order to avoid the effect of up-conversion luminescence on PSL signal. These results will advance the electron trapping optical storage scheme.

Automated summary

In this study, a Y3Al2Ga3O12:Pr3+,Eu3+ optical storage phosphor with Pr3+ as an electron donor and Eu3+ as an electron trap is designed, and a single wavelength write-read scheme is demonstrated using a blue laser diode (LD) light source. The deep electron trap with a mean depth of 1.42 eV and a narrow distribution of 0.3 eV shows the potential for long-term storage. These findings will advance the electron trapping optical storage scheme.