4.6 Article

De-Ammonium Ba0.18V2O4.95/NH4V4O10 Film Electrodes as High-Performance Cathode Materials for Magnesium-Ion Batteries

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LANGMUIR
卷 39, 期 18, 页码 6580-6591

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AMER CHEMICAL SOC
DOI: 10.1021/acs.langmuir.3c00552

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In this study, Ba0.18V2O4.95/NH4V4O10 film electrodes were grown on ITO conductive glass using a one-step method. The films annealed at 400 degrees C showed suitable crystallinity and de-ammonium lattice space. These film electrodes exhibited good electrochemical performance and high capacity retention, making them promising cathode candidates for scalable Mg2+ storage in magnesium-ion batteries.
Magnesium-ion batteries (MIBs) have been pushed into the research boom in the post-lithium-ion batteries era due to their low cost, no dendrite hazard, and high capacity. However, finding suitable cathode materials to improve the slow kinetics of Mg2+ is an ongoing challenge. In this work, Ba0.18V2O4.95/NH4V4O10 film electrodes were grown in one step on indium tin oxide (ITO) conductive glass using a low-temperature liquid-phase deposition method. Temperature was used as the probe condition, and it was concluded that the films annealed at 400 degrees C had suitable crystallinity and de-ammonium lattice space. At lower current density, with 0.5 M Mg(ClO4)2/PC as the electrolyte, it exhibited an initial discharge capacity of 130.99 mA h m-2 at 210 mA m-2 and 106.52% capacity retention after 100 cycles. In addition, it exhibited excellent electrochemical performance in long-term cycling (92.98% capacity retention after 300 cycles at 600 mA m-2). According to the results of ex situ X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy (HRTEM), the removal of NH4+ created more lattice space, assisting Ba0.18V2O4.95 to increase the transfer channels of Mg2+, providing more active sites to promote diffusion kinetics (the average DMg2+ was 2.07 x 10-12 cm2 s-1) and specific capacity. Therefore, these film electrodes for scalable Mg2+ storage are promising MIB cathode candidates that exhibit good performance advantages in storage applications.

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