4.5 Article Proceedings Paper

Correlating elemental compositions and charge carrier profiles in ultra-pure GaN/AlGaN stacks grown by molecular beam epitaxy

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Crystallography

Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

S. Schmult et al.

Summary: This study reports the suppression of parasitic conductivity in GaN/AlGaN heterostructures by carbon delta-doping at the substrate/MBE regrowth interface. The presence of silicon adhesion on the GaN substrate surface results in parasitic conductivity, and its removal before growth seems to be impossible. This contamination and resulting parasitic conductivity are particularly detrimental when growing on unintentionally doped substrates, as it masks the 2D transport properties even at cryogenic temperatures. Compensating the silicon-induced charges through carbon delta-doping inhibits the formation of this parasitic channel, allowing the study of intrinsic 2D channel properties in low-temperature magneto-transport measurements.

JOURNAL OF CRYSTAL GROWTH (2022)

Article Materials Science, Multidisciplinary

Normally-Off Operation of Lateral Field-Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

Stefan Schmult et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)

Review Physics, Applied

The 2018 GaN power electronics roadmap

H. Amano et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)

Article Engineering, Electrical & Electronic

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

David F. Storm et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)

Article Engineering, Electrical & Electronic

Control of unintentional oxygen incorporation in GaN

Stefan Schmult et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2017)

Article Materials Science, Multidisciplinary

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Felix Schubert et al.

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2016)

Article Materials Science, Multidisciplinary

Current Status and Emerging Trends in Wide Bandgap (WBG) Semiconductor Power Switching Devices

Krishna Shenai et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2013)