On the possible nature of deep centers in Ga2O3

The electric field dependence of emission rate of the deep traps with level near E-c-0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. The traps were initially introduced by 900 degrees C ampoule annealing in molecular hydrogen. The results indicate the activation energy of the centers and the ratio of high-field to low-field electron emission rates at a fixed temperature scale as the square root of electric field, suggesting that the centers behave as deep donors. The possible microscopic nature of the centers in view of recent theoretical calculations is discussed. The most likely candidates for the E1 centers are Si-Ga1-H or Sn-Ga2-H complexes.

Automated summary

The study investigates the relationship between the emission rate of deep traps called E1 traps and the electric field dependence. The results demonstrate that the activation energy of the centers and the ratio of high-field to low-field electron emission rates follow a linear relationship with the square root of electric field at a fixed temperature, indicating the deep donor behavior of these traps. The possible microscopic nature of these centers is discussed based on recent theoretical calculations, and the most likely candidates are proposed to be Si-Ga1-H or Sn-Ga2-H complexes.