Dopant Selective Photoelectrochemical Etching of SiC

Single crystalline 4H-SiC is a wide-gap semiconductor with optical properties that are poised to enable new applications in MEMS and quantum devices. A number of key hurdles remain with respect to the micro and nano-fabrication of SiC to prepare precise photonic structures with nanometer-scale precision. These challenges include development of a fast, scalable etching process for SiC capable of producing a sub-nanometer roughness semiconductor surface while simultaneously reducing the total thickness variation across a wafer. Our investigation into UV photoelectrochemical processing of SiC reveals high dopant-type selectivity and the advantage of multiple etch stops to reduce layer thickness variation. We demonstrate dopant-type selectivities >20:1 using a single step and a >100x reduction in surface variation by combining two etch stops. Moreover, the etch rate is fast (>4 mu m h(-1)) and the etched surface is smooth (similar to 1 nm RMS). These results demonstrate a scalable path to the fabrication of precise nanoscale SiC structures and electronic devices that will enable the next generation of MEMS and photonic quantum devices.

Automated summary

Single crystalline 4H-SiC is a promising wide-gap semiconductor for MEMS and quantum devices. However, challenges remain in the micro and nano-fabrication of SiC to create precise photonic structures with nanometer-scale precision. This study investigates UV photoelectrochemical processing of SiC and demonstrates high dopant-type selectivity, reduced layer thickness variation, fast etch rate, and smooth etched surface. These findings provide a scalable approach for the fabrication of nanoscale SiC structures and electronic devices, enabling the development of next-generation MEMS and photonic quantum devices.