Novel B-site scheelite structure ceramic Bi(Ge0.5Mo0.5)O-4 and its dielectric properties

Scheelite structure phase inorganic oxides show their irreplaceable role in numerous application areas due to their clear structure and superior properties, especially in dielectrics. Scheelite structure phase BiVO4 has been permanently studied but substitutions, modifications, and explorations of novel phases persist hitherto and inspire more interest. In this work, we report a novel Scheelite structure phase of Bi(Ge0.5Mo0.5)O-4 and a detailed study of both structural analysis and dielectric properties investigation. Bi(Ge0.5Mo0.5)O-4 adopts the monoclinic Scheelite structure, identical to BiVO4, with a dielectric permittivity of & SIM; 35, Qf value of & SIM;20 000 GHz, and TCF value of -46 ppm/& DEG;C. No secondary ferroelastic transition was seen in Bi(Ge0.5Mo0.5)O-4 till 600 & DEG;C, close to its synthetical temperature. The results indicate the success of discovering a new Scheelite structure phase and its prior engineering potential in modifying and substituting BiVO4 over the dielectric area, photocatalyst, ion conductor, and so forth.

Automated summary

In this work, a novel monoclinic Scheelite structure phase of Bi(Ge0.5Mo0.5)O-4 is reported, with similar properties to BiVO4. The new phase exhibits a dielectric permittivity of approximately 35, a Qf value of around 20000 GHz, and a TCF value of -46 ppm/°C. These findings demonstrate the potential of the new Scheelite structure phase for modifying and substituting BiVO4 in various applications.